surface mount t ran s z or b ? t ransient v oltage suppressor s stand-off v oltage 5.0 to 188v peak pulse power 600w 0.180 (4.57) 0.160 (4.06) 0.016 (0.41) 0.006 (0.15) 0.020 (0.51) max. 0.058 (1.47) 0.038 (0.97) 0.255 (6.48) 0.235 (5.97) 0.030 (0.76) 0.015 (0.38) 0.008 (0.20) 0.004 (0.10) seating plane 0.155 (3.94) 0.130 (3.30) 0 .083 (2.10) 0 .077 (1.96) 0.095 (2.41) 0.075 (1.90) cathode band dimensions in inches and (millimeters) do-215a a (smbg) features ? underwriters laboratory recognition under u l standard for safety 497b: isolated loop circuit protection ? low profile package with built-in strain relief for surface mounted applications ? glass passivated junction ? low incremental surge resistance, excellent clamping capability ? 600w peak pulse power capability with a 10/100 0 s waveform, repetition rate (duty cycle): 0.01% ? v ery f ast response tim e ? high temperature soldering guaranteed: 250 c/10 seconds at terminals mechanical data case: jedec do-215a a molded plastic over passivated junction t erminals: solder plated, solderable per mil-std-750, method 2026 polarity: for unidirectional types the band denotes the cathode, which is positive with respect to the anode under normal tvs operation w eight: 0.003 oz., 0.093 g flammability: epoxy is rated u l 94 v -0 packaging codes C options (antistatic): 51 C 2k per bulk box, 20k/carton 52 C 750 per 7" plastic reel (12mm tape), 15k/carton 5b C 3.2k per 13" plastic reel (12mm tape), 32k/carto n mounting pad layout d e d n e t x e e g n a r e g a t l o v devices for bidirectional applications for bi-directional devices, use su f fix c or c a (e.g. smbj10c, smbj10ca). electrical characteristics apply in both directions. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. paramete r symbo l v alu e unit peak pulse power dissipation with p ppm minimum 60 0 w a 10/1000 s waveform (1)(2) (fig. 1) peak pulse current with a 10/1000 s waveform (1) i ppm see t able belo w a peak forward surge current 8.3ms single half sine-wave i fsm 10 0 a uni-directional only (2) t ypical thermal resistance, junction to ambient (4) r ja 100 c/w t ypical thermal resistance, junction to lea d r jl 20 c/w operating junction and storage temperature rang e t j , t stg C 55 to +150 c notes: (1) non-repetitive current pulse, per fig.3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2 x 0.2 (5.0 x 5.0mm) copper pads to each terminal (3) mounted on minimum recommended pad layout smbg5.0 thru 188c a v ishay semiconductors formerly general semiconductor document number 88456 ww w .visha y .com 24-jul-03 1 0.165 (4.19) 0.085 (2.16) 0.060(1.27)
electrical characteristics ratings at 2 5 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 50 a (uni-directional only ) devic e breakdown v oltag e maximu m maximu m maximum device t yp e markin g v (br) at i t (1) t es t stand-of f reverse leakage peak pulse surg e clamping modifie d cod e (v ) curren t v oltag e at v wm current i ppm v oltage at i ppm gull win g un i bi mi n ma x i t (ma ) v wm (v ) i d ( a ) (3 ) (a) (2) v c (v) +smbg5. 0 k d k d 6.4 0 7.8 2 1 0 5. 0 80 0 62. 5 9.6 +smbg5.0a (5) k e k e 6.40 7.0 7 1 0 5. 0 80 0 65. 2 9.2 +smbg6. 0 k f k f 6.6 7 8.1 5 1 0 6. 0 80 0 52. 6 1 1.4 +smbg6.0 a k g k g 6.67 7.3 7 1 0 6. 0 80 0 58. 3 10.3 +smbg6. 5 k h a h 7.2 2 8.8 2 1 0 6. 5 50 0 48. 8 12.3 +smbg6.5 a k k ak 7.2 2 7.9 8 1 0 6. 5 50 0 53. 6 1 1.2 +smbg7. 0 k l k l 7.7 8 9.5 1 1 0 7. 0 20 0 45. 1 13.3 +smbg7.0 a k m k m 7.78 8.6 0 1 0 7. 0 20 0 50. 0 12.0 +smbg7. 5 k n a n 8.3 3 10. 2 1. 0 7. 5 10 0 42. 0 14.3 +smbg7.5 a k p a p 8.33 9.2 1 1. 0 7. 5 10 0 46. 5 12.9 +smbg8. 0 k q a q 8.8 9 10. 9 1. 0 8. 0 5 0 40. 0 15.0 +smbg8.0 a k r a r 8.89 9.8 3 1. 0 8. 0 5 0 44. 1 13.6 +smbg8. 5 k s a s 9.4 4 1 1. 5 1. 0 8. 5 2 0 37. 7 15.9 +smbg8.5 a k t a t 9.44 10. 4 1. 0 8. 5 2 0 41. 7 14.4 +smbg9. 0 k u a u 10. 0 12. 2 1. 0 9. 0 1 0 35. 5 16.9 +smbg9.0 a k v a v 10.0 1 1. 1 1. 0 9. 0 1 0 39. 0 15.4 +smbg1 0 k w a w 1 1. 1 13. 6 1. 0 1 0 5. 0 31. 9 18.8 +smbg10 a k x a x 1 1.1 12. 3 1. 0 1 0 5. 0 35. 3 17.0 +smbg 1 1 k y k y 12. 2 14. 9 1. 0 1 1 5. 0 29. 9 20.1 +smbg 1 1 a k z k z 12.2 13. 5 1. 0 1 1 5. 0 33. 0 18.2 +smbg1 2 l d b d 13. 3 16. 3 1. 0 1 2 5. 0 27. 3 22.0 +smbg12 a l e b e 13.3 14. 7 1. 0 1 2 5. 0 30. 2 19.9 +smbg1 3 l f l f 14. 4 17. 6 1. 0 1 3 1. 0 25. 2 23.8 +smbg13 a l g l g 14.4 15. 9 1. 0 1 3 1. 0 27. 9 21.5 +smbg1 4 l h b h 15. 6 19. 1 1. 0 1 4 1. 0 23. 3 25.8 +smbg14 a l k b k 15.6 17. 2 1. 0 1 4 1. 0 25. 9 23.2 +smbg1 5 l l b l 16. 7 20. 4 1. 0 1 5 1. 0 22. 3 26.9 +smbg15 a l m b m 16.7 18. 5 1. 0 1 5 1. 0 24. 6 24.4 +smbg1 6 l n l n 17. 8 21. 8 1. 0 1 6 1. 0 20. 8 28.8 +smbg16 a l p l m 17.8 19. 7 1. 0 1 6 1. 0 23. 1 26.0 +smbg1 7 l q l q 18. 9 23. 1 1. 0 1 7 1. 0 19. 7 30.5 +smbg17 a l r l r 18.9 20. 9 1. 0 1 7 1. 0 21. 7 27.6 +smbg1 8 l s b s 20. 0 24. 4 1. 0 1 8 1. 0 18. 6 32.2 +smbg18 a l t b t 20.0 22. 1 1. 0 1 8 1. 0 20. 5 29.2 +smbg2 0 l u l u 22. 2 27. 1 1. 0 2 0 1. 0 16. 8 35.8 +smbg20 a l v l v 22.2 24. 5 1. 0 2 0 1. 0 18. 5 32.4 +smbg2 2 l w b w 24. 4 29. 8 1. 0 2 2 1. 0 15. 2 39.4 +smbg22 a l x b x 24.4 26. 9 1. 0 2 2 1. 0 16. 9 35.5 +smbg2 4 l y b y 26. 7 32. 6 1. 0 2 4 1. 0 14. 0 43.0 +smbg24 a l z b z 26.7 29. 5 1. 0 2 4 1. 0 15. 4 38.9 +smbg2 6 m d c d 28. 9 35. 3 1. 0 2 6 1. 0 12. 9 46.6 +smbg26 a m e c e 28.9 31. 9 1. 0 2 6 1. 0 14. 3 42.1 +smbg2 8 m f m f 31. 1 38. 0 1. 0 2 8 1. 0 12. 0 50.0 +smbg28 a m g m g 31.1 34. 4 1. 0 2 8 1. 0 13. 2 45.4 +smbg3 0 m h c h 33. 3 40. 7 1. 0 3 0 1. 0 1 1. 2 53.5 +smbg30 a m k c k 33.3 36. 8 1. 0 3 0 1. 0 12. 4 48.4 notes: (1) pulse test: t p 50ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 volts and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 (5) for the bidirectional smbg/smbj5.0ca, the maximum v (br) is 7.25v + underwriters laboratory recognition for the classification of protectors (qvgq2) under the u l standard for safety 497b and fil e number e136766 for both uni-directional and bi-directional devices smbg5.0 thru 188c a v ishay semiconductors formerly general semiconductor ww w .visha y .com document number 88456 2 24-jul-03
electrical characteristics ratings at 2 5 c ambient temperature unless otherwise specified. v f = 3.5v at i f = 50 a (uni-directional only ) devic e breakdown v oltag e maximu m maximu m maximum device t yp e markin g v (br) at i t (1) t es t stand-of f reverse leakage peak pulse surg e clamping modifie d cod e (v ) curren t v oltag e at v wm current i ppm v oltage at i ppm gull win g un i bi mi n ma x i t (ma ) v wm (v ) i d ( a ) (3 ) (a) (2) v c (v) +smbg3 3 m l c l 36. 7 44. 9 1. 0 3 3 1. 0 10. 2 59.0 +smbg33 a m m c m 36.7 40. 6 1. 0 3 3 1. 0 1 1. 3 53.3 +smbg3 6 m n c n 40. 0 48. 9 1. 0 3 6 1. 0 9. 3 64.3 +smbg36 a m p c p 40.0 44. 2 1. 0 3 6 1. 0 10. 3 58.1 +smbg4 0 m q c q 44. 4 54. 3 1. 0 4 0 1. 0 8. 4 71.4 +smbg40 a m r c r 44.4 49. 1 1. 0 4 0 1. 0 9. 3 64.5 +smbg4 3 m s c s 47. 8 58. 4 1. 0 4 3 1. 0 7. 8 76.7 +smbg43 a m t c t 47.8 52. 8 1. 0 4 3 1. 0 8. 6 69.4 +smbg4 5 m u m u 50. 0 61. 1 1. 0 4 5 1. 0 7. 5 80.3 +smbg45 a m v m v 50.0 55. 3 1. 0 4 5 1. 0 8. 3 72.7 +smbg4 8 m w m w 53. 3 65. 1 1. 0 4 8 1. 0 7. 0 85.5 +smbg48 a m x m x 53.3 58. 9 1. 0 4 8 1. 0 7. 8 77.4 +smbg5 1 m y m y 56. 7 69. 3 1. 0 5 1 1. 0 6. 6 91.1 +smbg51 a m z m z 56.7 62. 7 1. 0 5 1 1. 0 7. 3 82.4 +smbg5 4 n d n d 60. 0 73. 3 1. 0 5 4 1. 0 6. 2 96.3 +smbg54 a n e n e 60.0 66. 3 1. 0 5 4 1. 0 6. 9 87.1 +smbg5 8 n f n f 64. 4 78. 7 1. 0 5 8 1. 0 5. 8 103 +smbg58 a n g n g 64.4 71. 2 1. 0 5 8 1. 0 6. 4 93.6 +smbg6 0 n h n h 66. 7 81. 5 1. 0 6 0 1. 0 5. 6 107 +smbg60 a n k n k 66.7 73. 7 1. 0 6 0 1. 0 6. 2 96.8 +smbg6 4 n l n l 71. 1 86. 9 1. 0 6 4 1. 0 5. 3 1 14 +smbg64 a n m n m 71.1 78. 6 1. 0 6 4 1. 0 5. 8 103 +smbg7 0 n n n n 77. 8 95. 1 1. 0 7 0 1. 0 4. 8 125 +smbg70 a n p n p 77.8 86. 0 1. 0 7 0 1. 0 5. 3 1 13 +smbg7 5 n q n q 83. 3 10 2 1. 0 7 5 1. 0 4. 5 134 +smbg75 a n r n r 83.3 92. 1 1. 0 7 5 1. 0 5. 0 121 +smbg7 8 n s n s 86. 7 10 6 1. 0 7 8 1. 0 4. 3 139 +smbg78 a n t n t 86.7 95. 8 1. 0 7 8 1. 0 4. 8 126 +smbg8 5 n u n u 94. 4 1 1 5 1. 0 8 5 1. 0 4. 0 151 +smbg85 a n v n v 94.4 10 4 1. 0 8 5 1. 0 4. 4 137 +smbg9 0 n w n w 10 0 12 2 1. 0 9 0 1. 0 3. 8 160 +smbg90 a n x n x 100 11 1 1. 0 9 0 1. 0 4. 1 146 +smbg10 0 n y n y 11 1 13 6 1. 0 10 0 1. 0 3. 4 179 +smbg100 a n z n z 11 1 12 3 1. 0 10 0 1. 0 3. 7 162 +smbg 1 1 0 p d p d 12 2 14 9 1. 0 1 1 0 1. 0 3. 1 196 +smbg 1 10 a p e p e 122 13 5 1. 0 1 1 0 1. 0 3. 4 177 +smbg12 0 p f p f 13 3 16 3 1. 0 12 0 1. 0 2. 8 214 +smbg120 a p g p g 133 14 7 1. 0 12 0 1. 0 3. 1 193 +smbg13 0 p h p h 14 4 17 6 1. 0 13 0 1. 0 2. 6 231 +smbg130 a p k p k 144 15 9 1. 0 13 0 1. 0 2. 9 209 +smbg15 0 p l p l 16 7 20 4 1. 0 15 0 1. 0 2. 2 268 +smbg150 a p m p m 167 18 5 1. 0 15 0 1. 0 2. 5 243 +smbg16 0 p n p n 17 8 21 8 1. 0 16 0 1. 0 2. 1 287 +smbg160 a p p p p 178 19 7 1. 0 16 0 1. 0 2. 3 259 +smbg17 0 p q p q 18 9 23 1 1. 0 17 0 1. 0 2. 0 304 +smbg170 a p r p r 189 20 9 1. 0 17 0 1. 0 2. 2 275 smbg18 8 p t p t 20 9 25 5 1. 0 18 8 1. 0 1. 7 344 smbg188 a p s p s 20 9 23 1 1. 0 18 8 1. 0 2. 0 328 notes: (1) pulse test: t p 50ms (2) surge current waveform per fig. 3 and derate per fig. 2 (3) for bi-directional types having v wm of 10 volts and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 + underwriters laboratory recognition for the classification of protectors (qvgq2) under the u l standard for safety 497b and fil e number e136766 for both uni-directional and bi-directional devices smbg5.0 thru 188c a v ishay semiconductors formerly general semiconductor document number 88456 ww w .visha y .com 24-jul-03 3
ratings and characteristic curves (t a = 25 c unless otherwise noted) 0 25 50 75 100 0 75 2 5 50 10 0 125 15 0 17 5 200 p ( r e w o p e s l u p k a e p p p i ( t n e r r u c r o ) p p ) % , e g a t n e c r e p n i g n i t a r e d t a ambient t emperature ( c) fig . 2 C pulse derating cu r ve p m p p ) w k ( r e w o p e s l u p k a e p fig . 1 C p eak pulse p o wer rating cu r v e 0.1 1 10 100 0.1 s 1.0 s 10 s t d pulse width (sec.) 100 s 1.0m s 10ms 0.2 x 0.2" (0.5 x 0.5mm) copper pad areas fig . 6 C maxi m um non-repetitive p eak forwa r d su r g e current number of cycles at 60h z 10 200 100 1 10 100 8.3ms single half sine- w ave (jedec method) unidirectional only i m s f ) a ( t n e r r u c e g r u s d r a w r o f k a e p t p pulse duration (sec) ( e c n a d e p m i l a m r e h t t n e i s n a r t ) w / c fig . 5 C t ypical t ransient thermal impedance 0.1 1.0 10 100 0.00 1 0.0 1 0.1 1 1 0 10 0 1000 0 50 100 150 i m p p i % , t n e r r u c e s l u p k a e p m s r fig . 3 C pulse w a ve f orm t j = 25 c pulse width (td) is defined as the point where the peak current decays to 50% of i ppm tr = 10 sec. peak v alue i ppm half v alue ipp i ppm 2 td 10/1000 sec. w aveform as defined by r.e.a. 0 1.0 2.0 3. 0 4.0 t t ime (ms) c j ) f p ( e c n a t i c a p a c n o i t c n u j fig . 4 C t ypical j unction capacitanc e 10 100 1,000 6,000 10 1 10 0 200 v w m reverse stand-o f f v oltage (v) t j = 25 c f = 1.0mhz vsig = 50mvp-p v r , measured at stand-o f f v oltage, v wm measured at zero bias uni-directional bi-directional smbg5.0 thru 188c a v ishay semiconductors formerly general semiconductor ww w .visha y .com document number 88456 4 24-jul-03
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